Semiconductor circuit device and data processing system

ABSTRACT

Occurrence of power supply noise arising in connection with a step-down action at the time of turning on power supply is to be restrained. A step-down unit is provided with a switched capacitor type step-down circuit and a series regulator type step-down circuit, and stepped-down voltage output terminals of the step-down circuits are connected in common. The common connection of the stepped-down voltage output terminals of both step-down circuits makes possible parallel driving of both, selective driving of either or consecutive driving of the two. In the consecutive driving, even if the switched capacitor type step-down circuit is driven after driving the series regulator type step-down circuit first to supply a stepped-down voltage to loads, the switched capacitor type step-down circuit will need only to be compensated for a discharge due to the loads, and a peak of a charge current for capacitors can be kept low. When operation of the switched capacitor type step-down circuit is started, no large rush current arises, and occurrence of noise is restrained.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese application JP2003-365430 filed on Oct. 27, 2003, the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor circuit device having astep-down circuit, and more particularly to a semiconductor circuitdevice having a switched capacitor type step-down circuit, and furtherto a semiconductor circuit device having a switched capacitor typestep-down circuit and a series regulator type step-down circuit,involving for instance a technique effectively applicable to amicrocomputer for a portable communication terminal device or asystem-on-chip semiconductor circuit device (system LSI).

On-chip step-down circuits for semiconductor circuit devices includeseries regulator type step-down circuits. As a series regulator typestep-down circuit steps down the voltage by the turning-on resistance ofa transistor, as much power is lost as the voltage is stepped down. Moreefficient arrangements than series type circuits in power conversioninclude switching regulator type step-down circuits (FIG. 1 in PatentReference 2). As a switching regulator type step-down circuit requiresan inductor as an external unit, it entails problems in mounting spaceand cost. Step-down circuits needing no inductor and yet excelling inpower conversion efficiency include switched capacitor type step-downcircuits (FIG. 9 in Reference 2). Further, FIG. 1 in Patent Reference 1illustrates a circuit configuration in which a switched capacitor typestep-down circuit is connected to a series regulator type step-downcircuit in series, and a stepped-down voltage supplied from the seriesregulator type step-down circuit is received and further stepped down bya switched capacitor type step-down circuit.

[Patent Reference 1] Japanese Unexamined Patent Publication No.2002-325431.

[Patent Reference 2] Japanese Unexamined Patent Publication No.2002-369552.

SUMMARY OF THE INVENTION

The present inventors studied the possibility of working out a switchedcapacitor type step-down circuit needing no inductor and yet excellingin power conversion efficiency as a step-down circuit for LSIs and thelike for use in portable equipment. Through the study, the inventorsfound a problem that the switched capacitor type step-down circuitinvolved a high power supply current (rush current) especially at thetime of turning on power supply. In order to enhance its powerefficiency, it is desirable for the switched capacitor type step-downcircuit to be designed to minimize the on-resistance of the switch.However, this would result in the flow of a high power supply current atthe time of charging the capacitors. Especially at the time of turningon power supply, as the capacitors begin to be charged in a completelyuncharged state, it entails a problem of the flow of a high rushcurrent. This would give rise to power supply noise, electromagneticinterference (EMI) and the like.

An object of the present invention is to provide a semiconductor circuitdevice capable of reducing power consumption accompanying step-downoperation.

Another object of the present invention is to provide a semiconductorcircuit device capable of preventing or reducing the occurrence of powersupply noise accompanying step-down operation at the time of turning onpower supply.

Still another object of the present invention is to contribute toreducing power consumption by battery-powered data processing systems.

The above-described and other objects and novel features of the presentinvention will become apparent from the following description in thisspecification when taken in conjunction with the accompanying drawings.

Typical aspects of the present invention disclosed in the presentapplication will be briefly described below.

[1] A semiconductor circuit device has a step-down unit for generating astepped-down voltage by stepping down an external source voltage,wherein the step-down unit is provided with a switched capacitor typestep-down circuit and a series regulator type step-down circuit, and thestepped-down voltage output terminals of the step-down circuits areconnected in common. The common connection of the stepped-down voltageoutput terminals of both step-down circuits makes possible paralleldriving of both, selective driving of either or consecutive driving ofthe two. In the consecutive driving, even if the switched capacitor typestep-down circuit is driven after driving the series regulator typestep-down circuit first to supply a stepped-down voltage to loads, theswitched capacitor type step-down circuit will need only to compensatefor a discharge due to the loads, and a peak of a charge current forcapacitors can be kept low. When operation of the switched capacitortype step-down circuit is started, no large rush current arises, andoccurrence of noise is restrained.

If the semiconductor circuit device is further provided with a startingcontrol circuit which, at the time the external source voltage isapplied, first starts a step-down action of the series regulator typestep-down circuit and then starts a step-down action of the switchedcapacitor type step-down circuit, it can be ensured that, when theoperation of the switched capacitor type step-down circuit is started,no large rush current arise, and the occurrence of noise be restrained.

The starting control circuit may stop the step-down action of the seriesregulator type step-down circuit after starting the step-down action ofthe switched capacitor type step-down circuit. Where the switchedcapacitor type step-down circuit by itself has a sufficient currentsupply capacity, this feature can contribute to power saving.

In view of the desirability of not concentrating on a specific frequencyin (dispersing) the frequency spectrum of switching noise by changingover the capacitor connection in the switched capacitor type step-downcircuit, it is advisable for the switched capacitor type step-downcircuit to randomize the timing of changing over the connected state ofcapacitors in the charge/discharge cycle. For instance, the switchedcapacitor type step-down circuit may have a random number generatingcircuit for randomizing the timing of changing over and selecting, byuse of the generated random number, the timing of changing over theconnected state of capacitors. In short, having the series regulatortype step-down circuit take charge of stepping down at the time ofapplying power supply, the peak current can be lowered and, after thepower supply is started, the switched capacitor type step-down circuitwill need only to compensate for the discharge due to the loads. As aresult, the peak of the current can be kept low. By splitting theswitched capacitor type step-down circuit into a plurality of circuitsand driving the split circuits with lags in phase, the peak of the powersupply current can be further lowered.

The capacitors of the switched capacitor type step-down circuit can beeither external capacitors or on-chip capacitors. Each on-chip capacitorcan be configured by use of the gate insulating film or an inter-layerinsulating film of an MOS transistor as the dielectric.

In a specific mode of implementing the present invention, thesemiconductor circuit device may be provided with an external powersupply terminal for supplying a stepped-down voltage to outside thesemiconductor integrated circuit. This enables the stepped-down voltageto be used as the operating power for another semiconductor circuitdevice. This also enables the switched capacitor type step-down circuitto subject the stepped-down voltage to variable control for the agingpurpose.

[2] A semiconductor circuit device has a step-down unit formed over asemiconductor chip and intended for generating a stepped-down voltage bystepping down an external source voltage, wherein the step-down unit hasa switched capacitor type step-down circuit, a switch array constitutingthe switched capacitor type step-down circuit is split into a pluralityof sub-arrays, which are arranged discretely, to each switch sub-arrayis individually connected a switching capacitance of its own, and asmoothing capacitance is commonly connected to the switch sub-arrays.The common connection of the smoothing capacitance can contribute torestraining an increase in the number of components.

In a specific mode of implementing the present invention, thesemiconductor circuit device may have a step-down control circuit forcontrolling the timing of changing over the connection of a smoothingcapacitance and a switching capacitance by the switch array in thecharge/discharge cycle, and the step-down control circuit controls thechange-over timing of the plurality of switch sub-arrays with lagsbetween them. This contributes to dispersing the spectrum of the highfrequency components of noise due to switching for changing over thecapacitance connection in the switch array. In short, by splitting theswitch array of the switched capacitor type step-down circuit into aplurality of sub-arrays and driving them with lags in phase, the peak ofthe power supply current can be lowered.

Further, the step-down control circuit generates clock signals lagged inphase from switch array to switch array, and randomizes the connectionchange-over timing from switch array to switch array on the basis ofeach of the generated clock signals. Randomization, even if done fromswitch array to switch array, contributes to dispersing the spectrum ofthe high frequency noise, and further lowering the peak of the highfrequency noise. The step-down control circuit has a random numbergenerating circuit for randomizing the change-over timing, and selectsthe timing of connection change-over by use of the generated randomnumber.

In a preferable mode of implementing the present invention, the switcharrays are arranged in the vicinity of an externally connected electrodeformation area of the semiconductor chip. The distance from externalcapacitance elements can be thereby shortened, with the result ofenabling the influences of wiring resistance and parasitic capacitanceto be reduced. The step-down control circuit for controlling switchingactions of the plurality of switch arrays is used in common by theplurality of switch arrays, and arranged discretely from the switcharrays. The common use of the step-down control circuit contributes toreducing the size of the step-down unit.

In another preferable mode of implementing the present invention, thesemiconductor circuit device further has a series regulator typestep-down circuit together with the step-down control circuit, whereinthe stepped-down voltage output terminal of the switched capacitor typestep-down circuit and that of the series regulator type step-downcircuit are connected in common. By driving the switched capacitor typestep-down circuit after driving the series regulator type step-downcircuit first and supplying the stepped-down voltage to loads, theswitched capacitor type step-down circuit has only to compensate for thedischarge due to the loads. As a result, the peak of the current forcharging the capacitors can be kept low. When the operation of theswitched capacitor type step-down circuit is started, no large rushcurrent arises, and the occurrence of noise is restrained.

At the time the external source voltage is applied, the starting controlcircuit first starts a step-down action of the series regulator typestep-down circuit and then starts a step-down action of the switchedcapacitor type step-down circuit. The presence of this starting controlcircuit can ensures that, when the operation of the switched capacitortype step-down circuit is started, no large rush current arise, and theoccurrence of noise be restrained.

[3] The semiconductor circuit device is used in a battery-powered dataprocessing system. EMI can be reduced, with resultant contributions tothe enhancement of the communication performance of mobile communicationterminals and portable communication terminals.

Advantages achieved by some of the most typical aspects of the presentinvention disclosed in the present application will be briefly describedbelow.

It can serve to reduce power consumption accompanying step-downoperation.

It can prevent or reduce the occurrence of power supply noiseaccompanying step-down operation at the time of turning on power supply.

It can contribute to reducing power consumption by battery-powered dataprocessing systems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of step-down circuitprovided in the chip of a semiconductor integrated circuit according tothe present invention.

FIG. 2A is a circuit diagram of a switch array contained in thestep-down circuit.

FIG. 2B is a timing chart showing the timing of switch control over theswitch array of FIG. 2A.

FIG. 3 is a circuit diagram showing an example of details of a seriestype step-down circuit.

FIG. 4 is a circuit diagram showing an example of details of a levelsensor.

FIG. 5 is a logical circuit diagram showing an example of details of aswitch control circuit.

FIG. 6 is a timing chart showing an example of operational waveform atthe time of turning on power supply to a step-down circuit.

FIG. 7 is a layout diagram showing an example of arrangement in the LSIchip of the step-down circuit.

FIG. 8 is a plan showing an example of state in which a step-downcircuit-mounted semiconductor integrated circuit is mounted on a wiringboard.

FIG. 9 is a block diagram showing a second example of step-down circuitprovided in the chip of a semiconductor integrated circuit pertaining tothe present invention.

FIG. 10 is a logical circuit diagram showing an example of details ofthe switch control circuit of FIG. 9.

FIG. 11 is a block diagram showing a third example of step-down circuitprovided in the chip of a semiconductor integrated circuit pertaining tothe present invention.

FIG. 12 is a logical circuit diagram showing an example of logicalconfiguration of a phase randomizer circuit.

FIG. 13 is a logical circuit diagram showing an example of logicalconfiguration of the pseudo-random number generator circuit of FIG. 12.

FIG. 14 is a logical circuit diagram showing an example of logicalconfiguration of the one-shot pulse generator circuit of FIG. 12.

FIG. 15 is a logical circuit diagram showing an example of logicalconfiguration of the variable delay circuit of FIG. 12.

FIG. 16 is a logical circuit diagram showing an example of logicalconfiguration of the clock synthesizer circuit of FIG. 12.

FIG. 17 is a timing chart showing the operational waveform of the phaserandomizer circuit FIG. 12.

FIG. 18 is a logical circuit diagram showing another example of thevariable delay circuit of FIG. 12.

FIG. 19 is a logical circuit diagram showing still another example ofthe variable delay circuit of FIG. 12.

FIG. 20 is a logical circuit diagram showing yet another example of thepseudo-random number generator circuit of FIG. 12.

FIG. 21 is a timing chart showing the operational waveform of thepseudo-random number generator circuit of FIG. 20.

FIG. 22 is a logical circuit diagram showing another example of thephase randomizer circuit of FIG. 11.

FIG. 23A is a vertical section showing a first example of sealing asemiconductor integrated circuit having on chip the step-down circuitaccording to the present invention into the same package together with acapacitor.

FIG. 23B is a vertical section showing a second example of sealing asemiconductor integrated circuit having on chip the step-down circuitaccording to the present invention into the same package together with acapacitor.

FIG. 24A is a vertical section showing an example of mounting andresin-sealing capacitors over lead terminals together with asemiconductor integrated circuit having on chip the step-down circuitaccording to the present invention.

FIG. 24B is a plan of what is illustrated in FIG. 24A.

FIG. 25 is a block diagram showing an example of logical configurationof a cellular phone using a semiconductor integrated circuit having thestep-down circuit according to the present invention.

FIG. 26 is a circuit diagram showing the configuration of a switch arraywhere the step-down ratio is 3:1.

FIG. 27 is a circuit diagram showing the configuration of a switch arraywhere the step-down ratio is 3:2.

FIG. 28 equivalently illustrates the switch circuit of FIG. 2A.

FIG. 29 is a block diagram showing an example of details of theapplication processor 250 of FIG. 25.

FIG. 30 is a timing chart showing the operational waveform of the switchcontrol circuit of FIG. 10.

FIG. 31A illustrates a system that is used where a reference voltage ismatched with a high voltage at the time of burn-in by causing thereference voltage, when the power supply voltage rises above the normallevel, also to rise to follow it up.

FIG. 31B illustrates a system that is used where a reference voltage ismatched with a high voltage at the time of burn-in by switching thelevel of the reference voltage between a normal operation mode and aburn-in mode.

FIG. 32 is a circuit diagram showing an example of reference voltagegenerating circuit for implementing the technique illustrated in FIG.31B.

FIG. 33 is an equivalent circuit diagram showing the form of capacitanceconnection where a step-down ratio 2/3 is to be used in FIG. 27.

DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION

FIG. 1 shows an example of step-down circuit provided in the chip of asemiconductor integrated circuit according to the present invention. Thestep-down circuit shown therein comprises a reference voltage generatingcircuit 1, a series regulator type step-down circuit (which may bereferred to as simply series regulator) 2, a level sensor 3, a switchcontrol circuit 4 and switch arrays 5_1 through 5_n. The level sensor 3,the switch control circuit 4 and the switch arrays 5_1 through 5_n,together with external capacitors (not shown), constitute a switchedcapacitor type step-down circuit 6.

The reference voltage generating circuit 1 generates a stable referencevoltage VREF, not dependent on temperature or power supply voltage. Itmay consist of, for instance, a band gap type circuit or a circuit fortaking out a threshold voltage difference in an MOS transistor. Theseries regulator 2 forms a stepped-down voltage VDD by stepping down thevoltage with the on-resistance of the transistor. The level of thestepped-down voltage VDD is controlled to be identical with thereference voltage VREF.

The level sensor 3 compares the stepped-down voltage VDD and thereference voltage, and forms a stepped-down action stop signal STOPB forthe switched capacitor type step-down circuit. The switch controlcircuit 4 generates a plurality of switch control signals S forcontrolling the switch arrays 5_1 through 5_n on the basis of a clocksignal CLK. The switch arrays 5_1 through 5_n are switch circuits forconstituting switched capacitors which divide capacitances whileconsecutively altering the connection state of capacitors which receiveinput voltages. Reference sign VDDCPi denotes an input voltage terminal,VDDi, an output voltage terminal, VSSi, the grounding terminal of thecircuit, and CPi and CMi, terminals for externally connecting thecapacitors (i=1 to n). Output terminals VDD1 through VDDn are connectedwithin the chip. So are grounding terminals VSS1 through VSSn.

The output of the switched capacitor type step-down circuit 6 and thatof the series regulator 2 are commonly connected. Thus, the outputterminals VDD1 through VDDn of the switched capacitor type step-downcircuit 6 are commonly connected to the output terminal of the seriesregulator 2.

FIG. 2A shows one of the switch arrays 5_1 through 5_n as an example.The switch arrays 5_1 through 5_n have the same configuration, and willbe hereinafter represented by the switch array 5_n. The switch controlsignals S of FIG. 1 are supposed here to be three switch control signalsSA, SB and SC. The switch circuit of FIG. 2A enables the switchedcapacitor circuit of FIG. 28 to be equivalently configured. A P-channelMOS transistor MP1 corresponds to a switch SW1 of FIG. 28, an N-channelMOS transistor MN1 corresponds to a switch SW2 of FIG. 28, an N-channelMOS transistor MN2 corresponds to a switch SW3 of FIG. 28, and anN-channel MOS transistor MN3 corresponds to a switch SW4 of FIG. 28. Asshown in FIG. 2B by way of example, the switch control signals SB and SCare not set to a low level at the same time, and the switch controlsignal SA is made an inverted signal of the switch control signal SB.

In the circuit of FIG. 2A, a capacitor C1 (switching capacitance) ofFIG. 28 is connected to terminals CM and CP, and a capacitor C0(smoothing capacitance) is externally connected between the groundingterminal and the output terminal VDD of the circuit. According to theswitch control timing of FIG. 2B, the switches SW1 and SW3 are turnedon, the switches SW2 and SW4 are turned off, and the capacitors C0 andC1 are connected in series and charged with VCCP. Next, the switches SW1and SW3 are turned off, the switches SW2 and SW4 are turned on, and thecapacitors C0 and C1 are connected in parallel. The output voltage VDDwill be roughly VCCP/2 if the on-resistance of the switches is ignored.By changing over the connection of the two capacitors C0 and C1 in thisway, the input voltage VCCP is stepped down to generate the outputvoltage VDD. If, for instance, 2.8 V is applied to the input voltageterminal VCCP, 1.4 V will be supplied from the output voltage terminalVDD.

Referring to FIG. 2A, the channel widths/channel lengths of the MOStransistor are, for example, MP1=3200/0.4, MN1 2800/0.4, MN2=2800/0.4and MN3=1200/0.4 (in μm) MN1 and MN2 are larger in size than MN3. Thisis because the channel width is expanded to reduce the on-resistance asthe gate-source voltage is small, VCCP−VDD, and a substrate bias (−VDD)works.

The MOS transistors MP1, MN1 and MN2 have low threshold voltages and theMOS transistor MN3 have a high threshold voltage. The reason for the lowthreshold voltages of the MOS transistors MP1, MN1 and MN2 is that theyare to reduce the on-resistance. The reason for the high thresholdvoltage of the MOS transistor MN3 is that it is to reduce the leakcurrent when the operation is stopped. When the operation is stopped, SAis at a high level, SB is at a low level, and SC is at a high level.Thus, the MOS transistors MP1 and MN2 are on, and the MOS transistorsMN1 and MN3 are off. If the threshold voltage of the MOS transistor MN3is low, a sub-threshold leak current may flow because VDD is appliedbetween the drain and the source. Although the drain-source voltage ofthe MOS transistor MN1 is VCCP-VDD, the effective threshold voltage ishigh and the leak current is little, because a substrate bias isapplied.

The reason why not only the MOS transistors MP1, MN1 through MN3 forswitching but also inverters INV1 through INV3 for driving their gatesare contained in the switch array 5_n is to reduce the influence ofwiring resistance in view of the arrangement of the switch controlcircuit 4 away from the switch arrays 5_1 through 5_n.

FIG. 3 shows an example of detailed circuitry of the series typestep-down circuit 2. This step-down circuit 2 compares the referencevoltage VREF and the voltage VDD with a differential amplifier DFAMP1,and controls an output MOS transistor MP10. The output MOS transistorMP10 is of a P-channel type, and its channel width/channel length is,for instance, 500/0.4 (in μm). It is smaller in size than the MOStransistor MP1 of the switch array. The purpose is to lower the powersupply current peak at the time of turning on the power supply.Reference sign VCCA denotes an input voltage terminal, whose voltagelevel is the same as VCCP. Reference sign EN2 denotes an enable signalfor the series type step-down circuit 2, which is enabled when EN2 is ata high level and disabled when it is at a low level.

FIG. 4 shows an example of detailed circuitry of the level sensor 3. Adifferential amplifier DFAMP2 compares the voltage VDD and the referencevoltage VREF, and generates a stop signal STOPB. When the voltage VDD islower than the reference voltage VREF, STOPB is at a high level, andwhen the voltage VDD is higher than the reference voltage VREF, STOPB isat a low level. Reference sign EN1 denotes an enable signal for theswitched capacitor type step-down circuit, which is enabled when EN1 isat a high level and disabled when it is at a low level. When EN1 is at alow level, STOPB is at a low level irrespective of the voltage VDD.

FIG. 5 shows an example of detailed logical circuitry of the switchcontrol circuit 4 of FIG. 1. It has a circuit 41 for generating aninternal clock ICLK from a clock CLK and a circuit 42 for generating theswitch control signals SA, SB and SC from the internal clock ICLK.Reference sign INV denotes an inverter, NAND, a NAND gate, AND, an ANDgate, NOR, a NOR gate, and D1, a delay circuit. Sign CLK denotes a clockinput terminal, STOPB, a stop signal, and FRUN, a free-run signal fortesting use.

During normal operation, FRUN is at a low level. If then STOPB is at ahigh level, the internal clock ICLK will follow the clock CLK. If STOPBis at a low level, the internal clock ICLK will be set to a low level.Even if the stop signal STOPB shifts from a high level to a low levelwhile the internal clock ICLK is at a high level, the internal clockICLK will not immediately fall to a low level, but will do so when theclock CLK falls to a low level next time.

If FRUN is at a high level, the internal clock ICLK will follow theclock CLK irrespective of the stop signal STOPB. The delay circuit D1 isprovided to prevent a through-current from being allowed to flow by thesimultaneous fall of signals SB and SC in FIG. 2 to a low level.

FIG. 6 shows an example of operational waveform at the time of turningon power supply to the step-down circuit of FIG. 1. From time t0 to t1,the power supply VCCP is actuated. Since the enable signal EN2 for theseries type step-down circuit is equal to VCCP, the series typestep-down circuit 2 is operated. This actuates VDD. As EN1 is at a lowlevel then, the switched capacitor type step-down circuit 6 does not yetoperate. The clock is entered from time t2 onward and when EN1 rises toa high level at time t3, the switched capacitor type step-down circuit 6begins to operate. Incidentally, the sequence between the clock inputand EN1 may as well be reverse.

Reference sign ICCP denotes a current flowing to the power source VCCP.Although a large current flows from t0 till t3 to actuate VDD, thecurrent waveform is not steep as indicated by waveform 60 because theonly operating element is the series type step-down circuit 2. This isbecause the current flows through an MOS transistor having a highon-resistance (MP10 in FIG. 3). As a switch MOS transistor whoseon-resistance is low is turned on when the switched capacitor typestep-down circuit 6 begins operation, the current waveform becomes sharpas indicated by waveform 61. As VDD is already actuated by this time,only a sufficient current to make up for the discharge due to the loadneeds to be supplied, and its peak is low. In short, even though theswitched capacitor type step-down circuit 6 is driven after astepped-down voltage is supplied to the load by driving the seriesregulator 2 earlier, the switched capacitor type step-down circuit 6will need to be compensated only for the discharge due to the load, thecurrent to charge the capacitors will have only low peaks. No large rushcurrent occurs when the switched capacitor type step-down circuit 6starts operation, and the occurrence of noise can be prevented orreduced.

Instead, after the power supply is actuated, the operation of the seriestype step-down circuit 2 may be stopped by setting EN2 to a low level.Or the operation of the series type step-down circuit 2 may be actuatedor stopped according to the operating mode. For instance, in anoperating mode entailing relatively high current consumption, both theseries type step-down circuit 2 and the switched capacitor typestep-down circuit 6 can be operated to increase the current supplycapacity, and in an operating mode entailing relatively low currentconsumption, only the switched capacitor type step-down circuit 6 can beoperated to enhance the efficiency of power conversion.

FIG. 7 shows an example of arrangement in the LSI chip of the step-downcircuit of FIG. 1. Reference numeral 10 denotes the chip of thesemiconductor integrated circuit (LSI chip), and 11, bonding pads. Inparticular, reference signs VCCP1 through VCCP4 denote bonding pads forthe input voltage VCCP, VDD1 through VDD4, bonding pads for the outputvoltage VDD, and VSS1 through VSS4, bonding pads for grounding use.Signs CP1 through CP4 and CM1 through CM4 denote bonding pads forexternal connection of capacitors. The area denoted by 12 in the LSIchip 10 is the core circuit section, where the principal parts of thesemiconductor integrated circuit are arranged. The area denoted by 13 isthe I/O area, where input/output circuits are mainly disposed.

A circuit area 14 arranged in the core circuit section 12 accommodatesthe reference voltage generating circuit 1, the series type step-downcircuit 2, the level sensor 3 and the switch control circuit 4. Thiscircuit area 14 is supplied with power supply VCCA as the operatingpower. The power supply pad for feeding the operating power VCCA to thecircuit area 14 should preferably be separated from the power supply padVCCP1 through VCCP4 for the switch array to prevent power supply noiseeven if the voltage level is the same. It is also preferable to separateground voltage wiring from digital circuits in the core circuit section12.

Reference numerals 15_1, 15_2, 15_3 and 15_4 denote areas in whichswitch arrays and protective elements for the prevention ofelectrostatic destruction are arranged in the I/O area 13.

Though not shown, wiring for switch control signals SA, SB and SC isarranged from the circuit area 14 to circuit areas 15_1, 15_2, 15_3 and15_4. For the power supply voltage VDD as operating power for the corecircuit section 12, meshed wiring is arranged within the LSI chip 10.

Since the areas 15_1 through 15_4 in which the switch arrays arearranged are disposed in the I/O area which is near bonding pads 11, theparasitic capacitance and parasitic resistance due to wiring can beminimized. Also, as the power source VCCA for the reference voltagegenerating circuit 1 and the level sensor 3 and the power source VCCPfor the switch arrays are separated from each other, power supply noisedue to switch operation can be prevented from adversely affecting thereference voltage generating circuit 1 and the level sensor 3.

FIG. 8 shows an example of state in which a semiconductor integratedcircuit mounted with the step-down circuit of FIG. 1 is mounted on awiring board. Reference numeral 20 denotes a wiring board (board), and21 denotes a package of the semiconductor integrated circuit (LSIpackage), in which the LSI chip of FIG. 7 is sealed. Numeral 22 denotesexternal terminals of the semiconductor integrated circuit, and 23_0denotes a capacitor such as a chip capacitor, whose electrostaticcapacity is supposed to be 1 μF for instance, matching the capacitanceC0 of FIG. 28. Numerals 23_1 through 23_4 denote capacitors such as chipcapacitors, whose electrostatic capacity is supposed to be 0.1 pF forinstance, corresponding to the capacitance C1 of FIG. 28. Numeral 24denotes on-board wiring for power supply VCC, 25, on-board wiring forgrounding potential VSS, and 26 denotes on-board wiring for thestepped-down voltage VDD.

The switched capacitor type step-down circuit 6 is provided with foursets of the circuit configuration of FIG. 1 on an LSI chip, and fourcapacitors 23_1 through 23_4 are mounted to match them. Only onesmoothing capacitor 23_0 is mounted for common use by the four sets ofcircuits. This arrangement for common use contributes to reducing thecost and the mounting area. It is preferable for the capacitors 23_1through 23_4 to be mounted as close as practicable to the terminals inorder to reduce parasitic capacitance and parasitic resistance.

FIG. 9 shows a second example of step-down circuit provided in the chipof the semiconductor integrated circuit pertaining to the presentinvention. The step-down circuit shown therein differs in its switchcontrol circuit 7 from the circuit of FIG. 1. Thus the difference fromFIG. 1 is that a plurality of (four in this case) switch arrays 5_1through 5_4 are driven with control signals S1 through S4 differing inphase from one another. The control signal S1 actually consists of threesignals S1A, S1B and S1C as shown in FIG. 10. This is also true of thesignals S2 through S4. This enables the peak of the power supply currentto be lowered. As the plurality of switch arrays 5_1 through 5_4 arecontrolled with lags in the timing of changing over in this way,reduction of high frequency noise due to switching for changing over thecapacitance connection in the switch arrays 5_1 through 5_4 isfacilitated. In other words, splitting the switch array of the switchedcapacitor type step-down circuit into a plurality of sub-arrays anddriving the split sub-arrays with phase lags serves to lower the peak ofthe power supply current.

FIG. 10 shows an example of detailed circuitry of the switch controlcircuit 7 of FIG. 9. Circuits 41_1 through 41_4 are the same as thecircuit 41 in FIG. 5, and generate internal clocks ICLKi (i=1 to 4) fromthe respectively matching clocks CLKi. Circuits 42_1 through 42_4 arethe same as the circuit 42 in FIG. 5, and generate switch controlsignals SiA, SiB and SiC (i=1 to 4) from the respectively matchinginternal clocks ICLKi. The circuit denoted by 71 is a frequency dividingcircuit, which divides the frequency of the clock CLK to generate theclocks CLK 1 through CLK4. Reference signs FF1 and FF2 denote Dflip-flops operating at the leading edge of the clock input (CK). SignsCLK1, CLK2, CLK3 and CLK4 denote clocks whose period is twice as long asthat of the clock CLK and lagging in phase by 90 degrees from one tonext. Examples of waveforms of the clocks CLK 1 through CLK4 therebyformed are shown in FIG. 30.

Referring to FIG. 30, CLK1 varies at the leading edge of CLK. CLK2varies at the trailing edge of CLK. CLK3 is supposed to be the invertedsignal of CLK1. CLK4 is supposed to be the inverted signal of CLK2. Inthe initial state, the signal STOPB is at a low level, and ICLK1 throughICLK4 are all set to a low level. When the signal STOPB rises to a highlevel at time t1, the clock ICLK1 is generated from the clock CLK 1, theclock ICLK2 from the clock CLK 2, the clock ICLK3 from the clock CLK3,and the clock ICLK4 from the clock CLK 4. Even if the signal STOPB fallsto a low level at time t2, the clock ICLK1 which is already at a highlevel then does not immediately fall to a low level, but falls to a lowlevel only when the clock CLK 1 falls to a low level next time. The sameis true of the clock ICLK2. The clock ICLK3 and the clock ICLK4, as theyare at a low level at time t2, remain at the low level as they are.

FIG. 11 shows a third example of step-down circuit provided in the chipof the semiconductor integrated circuit pertaining to the presentinvention. The difference from the circuit shown in FIG. 9 consists inthe addition of a phase randomizer circuit 8. The phase randomizercircuit 8 generates a clock RCLK by shifting at random the rise and falltimings of the clock CLK, and makes it an input to the switch controlcircuit 7. This provides an advantage of making it possible to dispersethe spectrum of the high frequency components of noise. It can beapplied with particular effectiveness to portable wireless devices, suchas cellular phones, because it serves to disperse the spectrum ofjamming waves.

FIG. 12 shows an example of logical configuration of the phaserandomizer circuit 8. Reference numeral 80 denotes a pseudo-randomnumber generator circuit, 81 denotes a one-shot pulse generator circuit,and 82_1 through 82_4 denotes latch circuits. Since signals R and F tobe latched have a plurality of bits each, actually each of the latchcircuits 82_1 through 82_4 consists of a plurality of latches. Numerals83_1 through 83_4 denote variable delay circuits. The delay time isdetermined by control signals R1, R2, F2, R3, R4 and F4. Numeral 84denotes a clock synthesizer circuit.

R and F are pseudo-random numbers. Actually each consists of a pluralityof bits (e.g. five bits). F is supposed to be a signal a half cycleearlier than R.

Reference sign P1 denotes a one-shot pulse which rises to a high levelat the leading edge of each odd-number cycle of the clock CLK and staysthere for a prescribed length of time. Sign P2 denotes a one-shot pulsewhich rises to a high level at the trailing edge of each odd-numbercycle of the clock CLK and stays there for a prescribed length of time.Sign P3 denotes a one-shot pulse which rises to a high level at theleading edge of each even-number cycle of the clock CLK and stays therefor a prescribed length of time. Sign P4 which rises to a high level atthe trailing edge of each even-number cycle of the clock CLK and staysthere for a prescribed length of time. Signs P1D, P2D, P3D and P4Drespectively denote signals resulting from the delaying of P1, P2, P3and P4 by variable delay circuits.

The phase randomizer circuit 8 having the configuration of FIG. 12 cancontrol the delay quantities of the leading/trailing edges of each cycleof the clock CLK by taking out the leading/trailing edges with aone-shot pulse generator circuit 81 and letting each edge pass variabledelay circuits 83_1 through 83_4. In short, P1 and P3 are subjected topulse variation in synchronism with the leading edge of the clock CLK;P2 and P4 are subjected to pulse variation in synchronism with thetrailing edge of the clock CLK; latches 82_1 through 82_4 latch randomnumbers R and F in response to pulse variations of the signals matchingP1 through P4; the variable delay circuit 83_1 through 83_4 delay thepulse variations of the signals matching P1 through P4 according to therandom numbers R and F and supply the delayed pulses as PD1 through PD4;and the clock synthesizer circuit 84 varies the clock RCLK to a highlevel in synchronism with the pulse variations of PD1 and PD3 and theclock RCLK to a low level in synchronism with the pulse variations ofPD2 and PD4. This results in randomization of the clock RCLK relative tothe clock CLK.

FIG. 13 shows an example of logical configuration of the pseudo-randomnumber generator circuit 80 of FIG. 12. Reference signs FF10 throughFF18 denote D flip-flops operating at the leading edge of the clockinput (CK). Signs L4 through L8 denote latches, which let through whenthe enable input (E) is at a high level and perform latching when it isat a low level. Reference sign EOR denotes an exclusive OR gate, andRST, a reset signal. By raising the reset signal RST to a high level,the output of the D flip-flop FF10 is set to a high level, the outputsof the D flip-flops FF11 through FF18 to a low level, and those oflatches L4 through L8 to a low level. The logical configurationcomprising D flip-flops FF11 through FF18 and EOR is a commonconfiguration for a pseudo-random number generator circuit. The latchesL4 through L8 latch earlier by a half cycle of the clock CLK than thesame inputs as those for the D flip-flops FF14 through FF18.

R[4] through R[8] are pseudo-random number outputs. At the outputs ofnine flip-flops, pseudo-random numbers of a period 2⁹−1=511 aregenerated. As pseudo-random numbers, five bits R[4] through R[8] out ofthe nine bits are used. F[4] through F[8] are supposed to be signals ahalf cycle earlier each than R[4] through R[8].

FIG. 14 shows an example of logical configuration of the one-shot pulsegenerator circuit 81 of FIG. 12. Reference signs FF21 and FF22 denote Dflip-flops operating at the leading edge of the clock input (CK). SignsD21 and D22 denote delay circuits. Signs P1, P2, P3 and P4 denote outputsignals. Sign P1 denotes the leading edge of an odd-number cycle of theclock CLK, P2 denotes the trailing edge of the odd-number cycle of theclock CLK, P3 denotes the leading edge of an even-number cycle of theclock CLK, and P4 denotes the trailing edge of the even-number cycle ofthe clock CLK, each staying at a high level for a prescribed length oftime (the delay time by D21 or D22).

FIG. 15 shows an example of logical configuration of the variable delaycircuit 83_2 of FIG. 12. Other variable delay circuits 83_1, 83_3 and83_4 have the same configurations. Reference sign A denotes an addingcircuit, D3_1 through D3_m, unit delay circuits, S1 denotes a selector,and R2 and F2 denote control signals of a plurality of bits each. Out ofsignals obtained by having an input signal P2 pass m unit delay circuitsD3_1 through D3_m, the (R+F)-th one is selected with the selector S1 toprovide an output P2D. The delay time is td (R+F), where td representsthe delay time of a unit delay circuit.

The (R+F)-th control signal supplied to the selector S1 is generated byan adding circuit A. P2 and P4 define the trailing edge of the clockRCLK and, in order not to let this trailing edge emerge at a timingearlier than the leading edge defined by P1 and P3, P2D (P4D) uses thesum (in effect the average) of R2 and F2, the value a half cycle beforeR2, as the control signal of the selector S1 for P2 (P4). No suchconsideration is needed for P1 and P3 because they define the leadingedge of the clock RCLK, and the adding circuit A uses the value of R1+R1(R3+R3) as the control signal for the selector S1. In short, as the twosets of control signals are the same signals, simple one-bit shiftingwould be sufficient for the variable delay circuits 83_1 and 83_3without needing the adding circuit A.

FIG. 16 shows an example of logical configuration of the clocksynthesizer circuit 84 of FIG. 12. Reference sign S2 denotes a selector,and RNDM denotes a phase randomization enable signal. When RNDM is at ahigh level, the output RCLK rises to a high level at the timing of P1Drising to a high level, falls to a low level at the timing of P2D risingto a high level, rises to a high level at the timing of P3D rising to ahigh level, and falls to a low level at the timing of P4D rising to ahigh level. When RNDM is at a low level, the input clock CLK becomes theoutput clock RCLK as it is. Namely, no phase randomization takes place.

FIG. 17 shows the operational waveform of the phase randomizer circuit 8of FIG. 12. At every leading edge (t1, t3, t5, . . . ) of the clock CLK,a new pseudo-random number R is generated (r1, r2, r3, . . . ). Thepseudo-random number F varies earlier than that, namely at the trailingedge of CLK.

The one-shot pulse P1 stays at a high level from the leading edge (t1,t5, . . . ) of each odd-number cycle of CLK, P2 from the trailing edge(t2, t6, . . . ) of each odd-number cycle of CLK, P3 from the leadingedge (t3, t7, . . . ) of each even-number cycle of each odd-number cycleof CLK, and P4 from the trailing edge (t4, t8, . . . ) of eacheven-number cycle of CLK, each for a prescribed length of time.

The output R1 of the latch circuit 82_1 varies when P1 rises to a highlevel. Thus it becomes r1 at time t1, to r3 at t5, and so on. Each ofthe outputs R2 and F2 of the latch circuit 82_2 varies when P2 rises toa high level. Thus they respectively become r1 and r2 at time t2, r3 andr4 at t6, and so forth. The output R3 of the latch circuit 82_3 varieswhen P3 rises to a high level. Thus it becomes r2 at time t3, r4 at t7and so forth. Each of the outputs R4 and F4 of the latch circuit 82_4varies when P4 rises to a high level. Thus they respectively become r2and r3 at time t4, r4 and r5 at t8 and so forth.

The output P1D of the variable delay circuit 83_1 becomes a pulseresulting from the delaying of P1 by td (2·R1). The output P2D of thevariable delay circuit 83_2 becomes a pulse resulting from the delayingof P2 by td (R2+F2). The output P3D of the variable delay circuit 83_3becomes a pulse resulting from the delaying of P3 by td (2·R3). Theoutput P4D of the variable delay circuit 83_4 becomes a pulse resultingfrom the delaying of P2 by td (R4+F4).

The output RCLK rises to a high level at the timing of P1D rising to ahigh level, falls to a low level at the timing of P2D rising to a highlevel, rises to a high level at the timing of P3D rising to a highlevel, and falls to a low level at the timing of P4D rising to a highlevel. Therefore, the leading edge at time t1 of CLK is delayed by td(2·r1), the trailing edge at t2, by td (r1+r2), the leading edge at t3,by td (2·r2), and the trailing edge at t4, by td (t2+t3).

The phase randomizer circuit 8 makes the delay time of a given trailingedge the average of the delay times of the leading edges immediatelybefore and after it. Therefore, even if the maximum delay time is setconsiderably long, neither the high level period nor the low levelperiod of RCLK will be lost. Theoretically, the maximum delay time canbe set equal to the period of CLK.

FIG. 18 shows another example of the variable delay circuit 83_2 (83_1,83_3 or 83_4) of FIG. 12. In FIG. 18, reference sign D4 denotes a delaycircuit and 90_1 denotes a unit variable delay circuit. This circuit hastwo unit delay circuits D5_1 and D5_2. When both control signals R2[4]and F2[4] are at a low level, an input signal P2D0 is supplied withoutpassing the unit delay circuit. When either one of R2[4] and F2[4] is ata high level, the input signal is supplied passing only D5_1 or whenboth R2[44] and F2[4] are at a high level, passing both D5_1 and D5_2.Reference numeral 90_2, 90_3, 90_4 and 90_5 also denote unit variabledelay circuits having a similar circuit configuration to 90_1. In thisway, depending on the combination of two bits each matching five-bit R2and F2, which can be one of three sets including (high level and highlevel), (high level and low level) and (low level and low level), oneout of three delay times is selected, with the result that one out of 32different delay times can be selected to generate P2D for P2. The delaytime of each unit delay circuit is set to be double that of 90_1 for90_2, four times the same for 90_3, eight times the same for 90_(—)4,and 16 times the same for 90_5.

The delay time from the input P2 to the output P2D, the delay times oflogic gates being ignored, can be represented by td{(R2[4]+F2[4])+2(R2[5]+F2[5])+4(R2[6]+F2[6])+8(R2[7]+F2[7])+16 (R2[8]+F2[8])}+td4, wheretd is the delay time of the unit delay circuit D5_1 or D5_2 and td4 isthe delay time of the delay circuit D4.

The role of the delay circuit D4 is to let the input pulse P2 pass theunit variable delay circuits after the setting of delay times accordingto the control signals R[4] through R[8] and F[4] through F[8] iscompleted.

The circuit configuration of FIG. 18 has an advantage of smaller circuitdimensions than the circuit of FIG. 15 because it does not need theadding circuit A.

FIG. 19 shows still another example of the variable delay circuit 83_2(83_1, 83_3 or 83_4) of FIG. 12. Reference sign A denotes an addingcircuit, S3 denotes a selector, and 911 and 912 denote variable delaycircuits. Although this is a circuit consisting of a plurality of unitdelay circuits in cascade, the delay time of each unit delay circuit canbe controlled by varying the bias voltage Vbias. Reference numeral 92denotes a charge pump circuit, which steps up or down Vbias inaccordance with the instruction of an up signal UP and a down signalDOWN. Reference numeral 93 denotes a phase comparator circuit, whichcompares the phase of P2 and that of a signal P2F resulting from thepassage of P2 through the variable delay circuits 91_1 and 92_2. If P2Fis behind P2, this circuit will raise Vbias by supplying the signal UPand shorten the delay times of the variable delay circuits 91_1 and92_2. If P2F is ahead of P2, it will lower V bias by supplying thesignal DOWN and extend the delay times of the variable delay circuits91_1 and 92_2.

The variable delay circuits 91_1 and 91_2, the charge pump 92 and thephase comparator circuit 93 can be implemented in a circuitconfiguration similar to what is used in, for instance, an analogdelay-locked loop (DLL) circuit.

The operating principle of the circuit of FIG. 19 is similar to that ofthe circuit of FIG. 15 except that the delay time can be controlled withVbias. An advantage of the circuit configuration of FIG. 19 consists inthat the maximum length of the delay time from the input P2 to theoutput P2D can be set equal to the period of CLK even if the period ofthe clock CLK, voltage or temperature varies or if there is any processfluctuation. If the phase of P2 and that of P2D are equal, the total ofthe delay times of 91_1 and 92_2 will be twice as long as the period ofCLK. Therefore, the maximum length of the delay time from P2 to P2D,namely the delay time of 91_1 is equal to the period of CLK.

Since the variable delay circuit 91_2, the charge pump 92 and the phasecomparator circuit 93 are circuits provided for measuring the period ofthe clock CLK, the four variable delay circuits 83_1 through 83_4 ofFIG. 12 can be commonly used for this purpose. The generated biasvoltage Vbias could then be distributed to the variable delay circuits83_1 through 83_4.

FIG. 20 shows yet another example of the pseudo-random number generatorcircuit 80 of FIG. 12. Reference numeral 85 denotes a pseudo-randomnumber generator circuit, which can be implemented with what is similarto the circuit of FIG. 13. However, F[4] through F[8] need not besupplied, and accordingly L4 through L8 are not required. Reference signM denotes a multiplying circuit, and 86_1 and 86_2 denote latchcircuits. Signs D3_1 through D3_m denote unit delay circuits, which arethe same as D3_1 through D3_m of FIG. 15. Numeral 87 denotes a phasecomparator circuit, which compares the phase of signals resulting fromthe delaying of the pulse P1 by D3_1 through D3_m with that of P3.Numeral 88 denotes an encoder, which encodes the output of the phasecomparator circuit and supplies the encoded output as a code Code. Thecode Code actually consists of a plurality of bits.

When P3 is in phase with a signal resulting from the passage of unitdelay circuits k times by Ps, Code is equal to k. This is in essencebecause there is a lag by one clock period between P1 and P3. Whatresults from the multiplication of Code=k by a pseudo-random number PRand picking up only its more significant bits is Mu1. Mu1 is apseudo-random number whose value is never greater than k. Signals R andF resulting from its latching are the output.

The circuit configured as shown in FIG. 20, like the circuit of FIG. 19,allows setting of the maximum length of the delay time equal to theperiod of CLK even if the period of the clock CLK, voltage ortemperature varies or if there is any process fluctuation. The reason isthat Code=k means that the phase difference between P1 and P3, namelythe period of CLK, is equal to k unit delay circuits, and this in turnmeans that the maximum length of the delay time of the variable delaycircuit 83_1 through 83_4 of FIG. 12 is k times the unit delay time,namely the period of CLK.

FIG. 21 shows the operational waveform of the pseudo-random numbergenerator circuit 80 of FIG. 20. The circuit 85 generates a newpseudo-random number PR (r1, r2, r3, . . . ) at each leading edge (t1,t3, t5, . . . ) of the clock CLK. On the other hand, the output Code ofthe encoder varies every time the pulse P3 rises to a high level (c1,c2, . . . ). The output Mu1 of the multiplying circuit varies at t1, t3,t5, . . . ; the output F results from latching this output at thetrailing edge (t2, t4, t6, . . . ) of CLK, and the output R results fromfurther latching the output F at the leading edge (t3, t5, t7, . . . )of CLK.

The pseudo-random number generator circuit 80 of FIG. 20 has anadvantage of quick response to variations in the period of the clockCLK, voltage or temperature. The reason is that the signal Coderepresenting the period of the clock CLK is updated at every secondcycle.

FIG. 22 shows another example of the phase randomizer circuit 8 of FIG.11. A feature of this example is that there is no clock input, butclocks are generated by self-oscillation inside. Thus, clocks aregenerated by a ring oscillator composed of m unit delay circuits D3_1through D3_m and a NAND gate NAND. By selecting at random one of the moutputs with the selector S1, the phase of the clocks is randomized.Reference sign EN denotes an enable signal, and self-oscillation isaccomplished by raising this signal to a high level.

FIG. 23A and FIG. 23B show examples of sealing a semiconductorintegrated circuit having on chip the step-down circuit according to thepresent invention into the same package together with a capacitor.Circuit elements having counterparts, either exact or substantial, inFIG. 7 or FIG. 8 are assigned respectively the same reference signs. Inthe configuration shown in FIG. 23A, the LSI chip 10 and the capacitors23 are arranged adjacent to each other and connected by a bonding wire103 to each other. In the configuration shown in FIG. 23B, thecapacitors 23 are mounted over pads 105 provided on the LSI chip 10 withsolder balls 106 in-between. Reference numeral 23 covers all of thecapacitors 23_0 through 23_4 of FIG. 8. Numeral 100 denotes a wiringboard such as a multi-layered wiring board, and 101 denotes moldedresin. By use of the sealing structure illustrated in this drawing, theneed to mount the capacitor on a board 20 is eliminated, and themounting area of the board 20 can be reduced accordingly. The capacitors23 to be sealed into the packet need not be all of the capacitors 23_0through 23_4. For instances, only the capacitors 23_1 through 23_4 wouldsuffice.

FIG. 24A and FIG. 24B show an example of mounting capacitors over leadterminals. FIG. 24A shows a vertical section, and FIG. 24B shows a plan.Here the step-down circuit is supposed to have two switch arrays 5_1 and5_2. Reference numerals 23_1 and 23_2 denote capacitors to be connectedto pads CPi and CMi shown in FIG. 7. Numeral 107 denotes an insulatingtape, and 110 denotes a lead. This configuration can also help reducethe mounting area over the board 20. Where the configuration of FIG. 24Aand FIG. 24B is to be used, it is preferable for the bonding pads CPiand CMi for externally connecting the capacitors to be adjacent to eachother. Their adjacent arrangement not only would facilitate mounting butalso could help reduce the parasitic inductance.

It is not absolutely necessary for the capacitors of the switchedcapacitor type step-down circuit to be capacitors 23 (23_1 and 23_2)external to the LSI chip 10. Though not shown in particular, they may beon-chip capacitors of the LSI chip 10. Each of the on-chip capacitorsmay be composed of an MOS capacitance of which one capacitance electrodeconsists of the gate electrode of an MOS transistor and the otherconsists of a common source-drain, or a capacitance using polysilicon orthe like for electrodes.

FIG. 25 shows an example of logical configuration of a cellular phoneusing a semiconductor integrated circuit having the step-down circuitaccording to the present invention. Step-down circuits 241 and 251 aremounted on an application processor 250 and a base band unit 240.Reference numeral 200 denotes an antenna, 210 denotes atransmission/reception switch-over circuit, 220 denotes an amplifier fortransmission use (high power amplifier), 230 denotes a radio frequencyunit, 240 denotes a base band unit, and 250 denotes an applicationprocessor. Numeral 241 denotes a step-down circuit built into the baseband unit 240, and 251 denotes a step-down circuit built into theapplication processor 250. Numeral 260 denotes a liquid crystal displayunit, 270 denotes a lithium battery, and 280 denotes a power supply IC.The power supply IC 280 is configured of, for instance, a series typestep-down circuit. Numeral 290 denotes a DC/DC converter, 300 denotes aclock generator, and 310 and 320 denote memories, for instance a flashmemory and an SRAM.

A system clock SCLK generated by the clock generator 300 is supplied tothe radio frequency unit 230, the base band unit 240 and the applicationprocessor 250 as the system clock. The step-down circuit 251 mounted onthe application processor 250 operates the switched capacitor typestep-down circuit by use of this system clock. Thus, the step-downcircuit 251 operates at the same frequency as the base band unit and theapplication process. This causes noise resulting from the operation ofthe step-down circuit 251 to have the same frequency as that arisingfrom the base band unit and the application processor, and accordinglythere is no particular need for the randomization of the clock phase asshown in FIG. 11.

When the application processor is not operating, the supply of the clockSCLK is also suspended. This prevents the switched capacitor typestep-down circuit from operating, but the series type step-down circuitconnected in parallel enables the output voltage to be held. The same istrue of the step-down circuit 241 mounted on the base band unit.

Examples of calculation of the efficiency of power conversion from thebattery 270 to the output of the step-down circuit 251 and the servicelife of the battery will be explained below. First, the followingsuppositions are made: the output of the lithium battery 270=3.7 V, thecapacity of the lithium battery=600 mAh, the output of the power supplyIC 280=2.8 V, the output of the step-down circuit 251=1.0 V, the currentconsumption of the application processor=200 mA, and other LSIs are in astandby state (current consumption is close to 0).

If the series type step-down circuit is used alone without applying thepresent invention, the power conversion efficiency will be 1.0/3.7=27%,the output current of the battery will be 200 mA, and the life of thebattery will be 3 hours.

If the present invention is used (the efficiency of the switchedcapacitor type circuit is supposed to be 90%), the power conversionefficiency will be 1.0/3.7×2×90%=49%, the output current of the batterywill be 200/2/90%=111 mA, and the life of the battery will be 5.4 hours.By use of the present invention, the life of the battery can be extendedby 1.8 times.

In the example of FIG. 2A, the step-down ratio is approximately 2:1. Asother examples, a circuit diagram of a switch array in which thestep-down ratio is 3:1 is shown in FIG. 26 and another in which thestep-down ratio is 3:2 is shown in FIG. 27. Reference signs CP11, CM11,CP12 and CM12 denote terminals for externally connecting capacitors(switching capacitances). The operational waveform of control signalsSA, SC and SB are the same as what are shown in FIG. 2B. Though notshown, where the step-down ratio is to be 1/3 in the circuit of FIG. 26,two switching capacitances and one smoothing capacitance can beconnected in series and charged, followed by the connection of the threecapacitances in parallel. Where the step-down ratio is to be 2/3 in thecircuit of FIG. 27, as shown in FIG. 33 by way of example, at first theswitching capacitances C1 and C2 can be connected in parallel, thenconnected in series to the smoothing capacitance C0 in series andcharged, followed by the connection of the switching capacitances C1 andC2 in series, and the smoothing capacitance C0 can be connected inparallel to them.

FIG. 29 shows an example of details of the application processor 250 ofFIG. 25. Reference numeral 251 denotes a step-down circuit according tothe present invention. Numeral 252 denotes the core circuit of theapplication processor 250, which works on a stepped-down power supplyVDD as its operating power. Numeral 253 denotes an input/output circuit,which works on a power supply VCCQ for input/output circuit use as itsoperating power. The power supply VCCQ for input/output circuit use,though the same as VCCP and VCCA in voltage level, is separated insource from others to prevent power supply noise arising in the outputcircuit from propagating to other circuit parts. The input/outputcircuit 253 contains an input circuit for the system clock SCLK. Insynchronism with the entered system clock SCLK, the clock CCLK (thevoltage level is VDD) for the core circuit 252 and the clock CLK (thevoltage level is VCCQ) for the step-down circuit 251 are supplied.Though the input/output circuit 253 of course is provided with inputcircuits and output circuits for other signals, too, their descriptionis dispensed with here. Reference numeral 254 denotes a power ONdetecting circuit for detecting the application of a power supplyvoltage. This detects the actuation of the power supply VCCA, andgenerates the reset signal RST for the core circuit 252 and the enablesignal EN2 for the step-down circuit 251. By having the enable signalEN2 delayed by a delay circuit, an enable signal EN1 is generated.

Techniques by which the output voltage VDD is set higher than normalwhen the semiconductor integrated circuit is to be burned in will bedescribed below. This can be implemented by so setting the referencevoltage VREF as to become higher at the time of burn-in. There are twomethods available for its implementation as shown in FIG. 31A and FIG.31B. In each graph, N denotes the operating point in normal operation(VCC=VCC1, VREF=VREF1), and B denotes the operating point in burn-in(VCC=VCC2, VREF=VREF2). It is adequate for both operating points N and Bto be positioned below the straight line of VREF=VCC/2 (the one-dotchain lines in the graphs).

The first method of implementation is to stabilize VCC relative to VREFin normal operation. When VCC rises above the normal level, VREF iscaused to rise correspondingly. This can be achieved by applying thetechnique described in U.S. Pat. No. 2,685,469. The second method ofimplementation is to change over the VREF level between the normaloperation mode and the burn-in mode.

FIG. 32 shows an example of reference voltage generating circuit 1 forimplementing the technique illustrated in FIG. 31B. Reference numeral 30denotes a band gap circuit, which generates a stable voltage VBGR notdependent on temperature or power supply voltage. Numeral 31 denotes avoltage level converting circuit. It comprises a differential amplifier32, a P-channel MOS transistor MP30, resistances R1, R2 and R3, and achange-over switch 33, and generates the reference voltage VREF on thebasis of a voltage VBGR. With a mode change-over signal Mode, it changesthe tap position for taking out the reference voltage VREF.

While the present invention achieved by the present inventors has beenhitherto described with reference to a specific embodiment thereof, thepresent invention is not limited to this embodiment. Obviously thepresent invention can be embodied in various other ways withoutdeviating from its essentials.

For instance, where a plurality of switched capacitor type circuits aremounted on an LSI, they can be only partly operated according to theoperating mode selected. The current consumption can be further reducedaccording to the operating mode. Or the current consumption can beoptimized according to the operating mode.

It is also conceivable to mount a step-down circuit on one of theplurality of LSIs used in the system, and the voltage generated therecan be supplied to other LSIs. This configuration can be applied withparticular effectiveness to a multi-chip module (MCM) into which aplurality of LSI chips are sealed.

The present invention is applicable not only to semiconductor integratedcircuits of a type integrated with a single circuit module, but also toother semiconductor devices, such as independent voltage converting ICs.

1. A semiconductor circuit device having a step-down unit for generatinga stepped-down voltage by stepping down an external source voltage,wherein said step-down unit is provided with a switched capacitor typestep-down circuit and a series regulator type step-down circuit, andstepped-down voltage output terminals of the step-down circuits areconnected in common.
 2. The semiconductor circuit device according toclaim 1, further having a starting control circuit which, at the timethe external source voltage is applied, first starts a step-down actionof said series regulator type step-down circuit and then starts astep-down action of the switched capacitor type step-down circuit. 3.The semiconductor circuit device according to claim 2, wherein saidstarting control circuit stops the step-down action of the seriesregulator type step-down circuit after starting the step-down action ofthe switched capacitor type step-down circuit.
 4. The semiconductorcircuit device according to claim 1, wherein the switched capacitor typestep-down circuit randomizes a timing of changing over a connected stateof capacitors in a charge/discharge cycle.
 5. The semiconductor circuitdevice according to claim 4, wherein the switched capacitor typestep-down circuit has a random number generating circuit for randomizingsaid change-over timing and selecting, by use of the generated randomnumber, the timing of changing over the connected state of capacitors.6. The semiconductor circuit device according to claim 1, whereincapacitors of the switched capacitor type step-down circuit are externalcapacitors.
 7. The semiconductor circuit device according to claim 1,wherein the capacitors of the switched capacitor type step-down circuitare on-chip capacitors.
 8. The semiconductor circuit device according toclaim 1, further having an external power supply terminal for supplyinga stepped-down voltage to outside the semiconductor integrated circuit.9. The semiconductor circuit device according to claim 1, wherein saidswitched capacitor type step-down circuit can subject the stepped-downvoltage to variable control for an aging purpose.
 10. A semiconductorcircuit device having a step-down unit formed over a semiconductor chipand intended for generating a stepped-down voltage by stepping down anexternal source voltage, wherein said step-down unit has a switchedcapacitor type step-down circuit, a switch array constituting theswitched capacitor type step-down circuit is split into a plurality ofsub-arrays, which are arranged discretely, to each switch sub-array isindividually connected a switching capacitance of its own, and asmoothing capacitance is commonly connected to the switch sub-arrays.11. The semiconductor circuit device according to claim 10, wherein saidswitching capacitances and smoothing capacitance are externallyconnected to the semiconductor chip.
 12. The semiconductor circuitdevice according to claim 10, wherein said switching capacitances andsmoothing capacitance are disposed on the semiconductor chip.
 13. Thesemiconductor circuit device according to claim 10, further having astep-down control circuit for controlling a timing of changing overconnection of the smoothing capacitance and switching capacitances bysaid switch array in the charge/discharge cycle, and said step-downcontrol circuit controls the change-over timing of a plurality of theswitch arrays with lags between them.
 14. The semiconductor circuitdevice according to claim 13, wherein said step-down control circuitgenerates clock signals lagged in phase from switch array to switcharray, and randomizes said connection change-over timing from switcharray to switch arrays on the basis of each of the generated clocksignals.
 15. The semiconductor circuit device according to claim 14,wherein said step-down control circuit has a random number generatingcircuit for randomizing said change-over timing, and selects saidconnection change-over timing by use of the generated random number. 16.The semiconductor circuit device according to claim 10, wherein saidswitch arrays are arranged in the vicinity of an externally connectedelectrode formation area of said semiconductor chip.
 17. Thesemiconductor circuit device according to claim 16, wherein thestep-down control circuit for controlling the switching actions of saidplurality of switch arrays is used in common by said plurality of switcharrays, and arranged discretely from said switch arrays.
 18. Thesemiconductor circuit device according to claim 13, further having aseries regulator type step-down circuit together with said step-downcontrol circuit, wherein the stepped-down voltage output terminal ofsaid switched capacitor type step-down circuit and that of the seriesregulator type step-down circuit are connected in common.
 19. Thesemiconductor circuit device according to claim 18, further having astarting control unit which, at the time the external source voltage isapplied, first starts a step-down action of said series regulator typestep-down circuit and then starts a step-down action of the switchedcapacitor type step-down circuit.
 20. A data processing system mountedwith the semiconductor circuit device having a step-down unit forgenerating a stepped-down voltage by stepping down an external sourcevoltage, wherein said step-down unit is provided with a switchedcapacitor type step-down circuit and a series regulator type step-downcircuit, and stepped-down voltage output terminals of the step-downcircuits are connected in common and driven by a battery.
 21. Thesemiconductor circuit device according to claim 17, further having aseries regulator type step-down circuit together with said step-downcontrol circuit, wherein the stepped-down voltage output terminal ofsaid switched capacitor type step-down circuit and that of the seriesregulator type step-down circuit are connected in common.
 22. Thesemiconductor circuit device according to claim 21, further having astarting control unit which, at the time the external source voltage isapplied, first starts a step-down action of said series regulator typestep-down circuit and then starts a step-down action of the switchedcapacitor type step-down circuit.
 23. A data processing system mountedwith the semiconductor circuit device having a step-down unit formedover a semiconductor chip and intended for generating a stepped-downvoltage by stepping down an external source voltage, wherein saidstep-down unit has a switched capacitor type step-down circuit, a switcharray constituting the switched capacitor type step-down circuit issplit into a plurality of sub-arrays, which are arranged discretely, toeach switch sub-array is individually connected a switching capacitanceof its own, and a smoothing capacitance is commonly connected to theswitch sub-arrays and driven by a battery.